Professional IC Distribution & Technical Solutions

The BSC070N10NS5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: BSC070N10NS5
• Type: N-Channel Power MOSFET
• Technology: OptiMOS™ 5
• Drain-Source Voltage (V_DS): 100 V
• Continuous Drain Current (I_D): 70 A
• Pulsed Drain Current (I_DM): 280 A
• R_DS(on) (Max): 7.0 mΩ @ V_GS = 10 V
• Gate-Source Voltage (V_GS): ±20 V
• Power Dissipation (P_D): 125 W
• Operating Junction Temperature (T_J): -55°C to +175°C
• Package: TO-263 (D2PAK)

Descriptions:

• The BSC070N10NS5 is a high-performance N-Channel MOSFET designed for power management applications.
• It is part of Infineon’s OptiMOS™ 5 family, offering low conduction losses and high efficiency.
• Suitable for switching power supplies, motor control, DC-DC converters, and automotive applications.

Features:

• Low R_DS(on) for reduced conduction losses.
• High current capability (70 A continuous, 280 A pulsed).
• Optimized for fast switching applications.
• AEC-Q101 qualified for automotive use.
• Lead-free and RoHS compliant.

This MOSFET is ideal for high-efficiency power conversion systems requiring robust performance and thermal stability.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)*