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The BSS131H6327 is a N-channel MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features of the component:

Specifications:

• Manufacturer: Infineon Technologies
• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DS): 200 V
• Continuous Drain Current (I_D): 0.17 A
• Power Dissipation (P_tot): 1.25 W
• Gate-Source Voltage (V_GS): ±20 V
• On-Resistance (R_DS(on)): 12 Ω (at V_GS = 10 V, I_D = 0.1 A)
• Threshold Voltage (V_GS(th)): 1.5 V (typical)
• Input Capacitance (C_iss): 8 pF
• Output Capacitance (C_oss): 3 pF
• Reverse Transfer Capacitance (C_rss): 1.5 pF
• Turn-On Delay Time (t_d(on)): 8 ns
• Turn-Off Delay Time (t_d(off)): 35 ns
• Operating Temperature Range: -55°C to +150°C
• Package: SOT-23 (SC-59)

Descriptions:

The BSS131H6327 is a high-voltage N-channel MOSFET designed for switching applications. It features low gate charge and fast switching speeds, making it suitable for low-power applications such as signal switching, load switching, and DC-DC converters.

Features:

• High voltage capability (200 V)
• Low threshold voltage (1.5 V typical)
• Fast switching performance
• Low input and output capacitance
• Compact SOT-23 package
• RoHS compliant

This information is based on Infineon's official datasheet for the BSS131H6327. For detailed performance characteristics, refer to the manufacturer's documentation.