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BSS131H6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS131H6327INFINEON48982Yes

BSS131H6327** is a **N-channel MOSFET** manufactured by **Infineon Technologies**.

The BSS131H6327 is a N-channel MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Manufacturer: Infineon Technologies
  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 200 V
  • Continuous Drain Current (ID): 0.17 A
  • Power Dissipation (Ptot): 1.25 W
  • Gate-Source Voltage (VGS): ±20 V
  • On-Resistance (RDS(on)): 12 Ω (at VGS = 10 V, ID = 0.1 A)
  • Threshold Voltage (VGS(th)): 1.5 V (typical)
  • Input Capacitance (Ciss): 8 pF
  • Output Capacitance (Coss): 3 pF
  • Reverse Transfer Capacitance (Crss): 1.5 pF
  • Turn-On Delay Time (td(on)): 8 ns
  • Turn-Off Delay Time (td(off)): 35 ns
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

The BSS131H6327 is a high-voltage N-channel MOSFET designed for switching applications. It features low gate charge and fast switching speeds, making it suitable for low-power applications such as signal switching, load switching, and DC-DC converters.

Features:

  • High voltage capability (200 V)
  • Low threshold voltage (1.5 V typical)
  • Fast switching performance
  • Low input and output capacitance
  • Compact SOT-23 package
  • RoHS compliant

This information is based on Infineon's official datasheet for the BSS131H6327. For detailed performance characteristics, refer to the manufacturer's documentation.

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