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FM25040B-GTR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FM25040B-GTRINFINEON 2500Yes

FM25040B-GTR** is a serial F-RAM (Ferroelectric RAM) memory device manufactured by **Infineon Technologies**.

The FM25040B-GTR is a serial F-RAM (Ferroelectric RAM) memory device manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: F-RAM (Ferroelectric RAM)
  • Density: 4 Kbit (512 x 8)
  • Interface: SPI (Serial Peripheral Interface)
  • Operating Voltage: 2.7V to 3.6V
  • Speed: Up to 20 MHz
  • Write Endurance: 10^14 read/write cycles
  • Data Retention: 10 years at 85°C
  • Operating Temperature Range: -40°C to +85°C
  • Package: 8-pin SOIC (Small Outline Integrated Circuit)

Descriptions:

  • The FM25040B-GTR is a non-volatile memory device that combines the speed of SRAM with the non-volatility of Flash/EEPROM.
  • It provides high-speed read/write operations without write delays or wear-out concerns.
  • Supports SPI bus modes 0 and 3 for flexible interfacing with microcontrollers.
  • Features instant non-volatility, meaning data is retained immediately upon power loss.

Features:

  • No Write Delays: Unlike Flash/EEPROM, F-RAM writes data instantly without needing a delay.
  • High Endurance: Supports 100 trillion read/write cycles, making it ideal for frequent data logging.
  • Low Power Consumption: Optimized for battery-powered applications.
  • Hardware & Software Protection: Includes a write-protect pin (WP) and software write protection.
  • Industrial-Grade Reliability: Operates reliably in harsh environments (-40°C to +85°C).

This device is commonly used in automotive, industrial, medical, and IoT applications where fast, reliable, and non-volatile memory is required.

(Note: Always refer to the official Infineon datasheet for detailed technical information.)

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