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IKW75N65ES5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IKW75N65ES5INFINEON 1148Yes

IKW75N65ES5** is a power semiconductor device manufactured by **Infineon Technologies**.

The IKW75N65ES5 is a power semiconductor device manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: IGBT (Insulated Gate Bipolar Transistor)
  • Voltage Rating (VCES): 650 V
  • Current Rating (IC @ 25°C): 75 A
  • Current Rating (IC @ 100°C): 50 A
  • Power Dissipation (Ptot): 330 W
  • Gate-Emitter Voltage (VGE): ±20 V
  • Collector-Emitter Saturation Voltage (VCE(sat)): 1.7 V (typical at IC = 75 A)
  • Switching Speed: Fast switching with low losses
  • Package: TO-247
  • Operating Temperature Range: -40°C to +150°C

Descriptions:

The IKW75N65ES5 is a high-performance NPT (Non-Punch Through) trench IGBT designed for high-efficiency power switching applications. It features low conduction and switching losses, making it suitable for motor drives, inverters, UPS systems, and industrial power supplies.

Features:

  • Low VCE(sat) for reduced conduction losses
  • Fast switching with optimized switching behavior
  • High current capability (75 A at 25°C)
  • High ruggedness and short-circuit withstand capability
  • Positive temperature coefficient for easy paralleling
  • RoHS compliant

This IGBT is optimized for high-frequency switching while maintaining thermal stability and reliability in demanding applications.

*(Data sourced from Infineon's official documentation.)*

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