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IPDH6N03LAG Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPDH6N03LAGINFINEON2000Yes

IPDH6N03LAG** is a power MOSFET manufactured by **Infineon Technologies**.

The IPDH6N03LAG is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6A
  • RDS(on) (Max): 0.09Ω @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Package: TO-252 (DPAK)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for DC-DC converters, motor control, and power management circuits.
  • Features low on-state resistance (RDS(on)) for reduced conduction losses.

Features:

  • Low threshold voltage for efficient switching.
  • Fast switching speed for high-frequency applications.
  • Avalanche ruggedness for improved reliability.
  • Lead-free and RoHS compliant.

This MOSFET is optimized for battery-powered and portable electronics due to its low power loss and compact package.

(Note: Always refer to the official Infineon datasheet for detailed electrical characteristics and application guidelines.)

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