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IPP023N10N5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPP023N10N5INFINEON 950Yes

### **IPP023N10N5 - INFINEON** #### **Manufacturer:** INFINEON #### **Specifications:** - **Part Number:** IPP023N10N5 - **Transistor Type:** N-Channel Power MOSFET - **Technology:** OptiMOS™ 5 - **Drain-Source Voltage (VDS):** 10

IPP023N10N5 - INFINEON

#### Manufacturer: INFINEON

#### Specifications:

  • Part Number: IPP023N10N5
  • Transistor Type: N-Channel Power MOSFET
  • Technology: OptiMOS™ 5
  • Drain-Source Voltage (VDS): 100 V
  • Continuous Drain Current (ID): 23 A (at 25°C)
  • Pulsed Drain Current (IDM): 92 A
  • Power Dissipation (PD): 42 W
  • RDS(on) (Max): 23 mΩ (at VGS = 10 V)
  • Gate-Source Voltage (VGS): ±20 V
  • Threshold Voltage (VGS(th)): 3.5 V (Typical)
  • Input Capacitance (Ciss): 560 pF
  • Output Capacitance (Coss): 90 pF
  • Reverse Transfer Capacitance (Crss): 25 pF
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220

#### Descriptions:

The IPP023N10N5 is a 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 series, designed for high-efficiency power switching applications. It offers low on-state resistance (RDS(on)) and fast switching performance, making it suitable for DC-DC converters, motor control, and power management systems.

#### Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability (23A continuous)
  • Fast switching speed for improved efficiency
  • Optimized for synchronous rectification
  • Avalanche ruggedness for reliability in harsh conditions
  • Lead-free and RoHS compliant
  • TO-220 package for easy mounting and heat dissipation

This MOSFET is ideal for applications requiring high power density and energy efficiency, such as SMPS, motor drives, and industrial power systems.

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