Professional IC Distribution & Technical Solutions

IPP023N10N5 - INFINEON

#### Manufacturer: INFINEON

#### Specifications:

• Part Number: IPP023N10N5
• Transistor Type: N-Channel Power MOSFET
• Technology: OptiMOS™ 5
• Drain-Source Voltage (V_DS): 100 V
• Continuous Drain Current (I_D): 23 A (at 25°C)
• Pulsed Drain Current (I_DM): 92 A
• Power Dissipation (P_D): 42 W
• R_DS(on) (Max): 23 mΩ (at V_GS = 10 V)
• Gate-Source Voltage (V_GS): ±20 V
• Threshold Voltage (V_GS(th)): 3.5 V (Typical)
• Input Capacitance (C_iss): 560 pF
• Output Capacitance (C_oss): 90 pF
• Reverse Transfer Capacitance (C_rss): 25 pF
• Operating Junction Temperature (T_J): -55°C to +175°C
• Package: TO-220

#### Descriptions:

The IPP023N10N5 is a 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 series, designed for high-efficiency power switching applications. It offers low on-state resistance (R_DS(on)) and fast switching performance, making it suitable for DC-DC converters, motor control, and power management systems.

#### Features:

• Low R_DS(on) for reduced conduction losses
• High current capability (23A continuous)
• Fast switching speed for improved efficiency
• Optimized for synchronous rectification
• Avalanche ruggedness for reliability in harsh conditions
• Lead-free and RoHS compliant
• TO-220 package for easy mounting and heat dissipation

This MOSFET is ideal for applications requiring high power density and energy efficiency, such as SMPS, motor drives, and industrial power systems.