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IPW65R041CFD Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPW65R041CFDINFINEON 1164Yes

IPW65R041CFD** is a power MOSFET manufactured by **Infineon Technologies**.

The IPW65R041CFD is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IPW65R041CFD
  • Technology: CoolMOS™ CFD7 (Fast Diode)
  • Package: TO-247
  • Polarity: N-Channel
  • Drain-Source Voltage (VDS): 650 V
  • Continuous Drain Current (ID): 41 A (at 25°C)
  • Pulsed Drain Current (IDM): 123 A
  • RDS(on) (Max): 41 mΩ (at VGS = 10 V, ID = 20 A)
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 330 W (at 25°C)
  • Operating Temperature Range: -55°C to +150°C
  • Switching Speed: Fast switching due to low gate charge (QG)
  • Diode Characteristics: Integrated fast body diode

Descriptions:

  • Designed for high-efficiency power conversion applications.
  • Optimized for hard-switching and soft-switching topologies (e.g., PFC, LLC, flyback).
  • Features low conduction and switching losses for improved efficiency.
  • CoolMOS™ CFD7 technology ensures robust performance in high-voltage applications.

Features:

  • Ultra-low RDS(on) for reduced conduction losses.
  • Fast intrinsic body diode for improved reverse recovery performance.
  • High dv/dt robustness for reliable operation in demanding conditions.
  • Avalanche rugged for enhanced durability.
  • Optimized gate charge for efficient switching.

This MOSFET is commonly used in SMPS, industrial power supplies, solar inverters, and motor drives.

(Note: Always refer to the official Infineon datasheet for precise details.)

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