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The IPW65R080CFD is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Category: Power MOSFET (Transistor)
• Technology: CoolMOS™ CFD7 (Fast Diode)
• Polarity: N-Channel
• Drain-Source Voltage (V_DS): 650 V
• Continuous Drain Current (I_D): 13 A (at 25°C)
• Pulsed Drain Current (I_DM): 52 A
• On-Resistance (R_DS(on)): 80 mΩ (max at V_GS = 10 V)
• Gate-Source Voltage (V_GS): ±30 V
• Power Dissipation (P_D): 190 W (at 25°C)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-247
• Mounting Type: Through Hole

Descriptions:

• The IPW65R080CFD is a high-voltage N-Channel MOSFET optimized for switching applications in power supplies, inverters, and motor control.
• It features CoolMOS™ CFD7 technology, which provides low switching losses and high efficiency due to its fast body diode.
• Designed for hard-switching and soft-switching topologies, it is suitable for PFC (Power Factor Correction), LLC resonant converters, and SMPS (Switched-Mode Power Supplies).

Features:

• Fast intrinsic body diode for reduced reverse recovery losses.
• Low gate charge (Q_G) for improved switching performance.
• High avalanche ruggedness for reliable operation in harsh conditions.
• Optimized for high-frequency switching applications.
• Low R_DS(on) for minimal conduction losses.
• TO-247 package for efficient thermal dissipation.

This MOSFET is commonly used in industrial, automotive, and renewable energy applications where high efficiency and robustness are required.