Professional IC Distribution & Technical Solutions

The IRF3710PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IRF3710PBF
• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 100V
• Continuous Drain Current (I_D): 57A (at 25°C)
• Pulsed Drain Current (I_DM): 230A
• Power Dissipation (P_D): 200W (at 25°C)
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 23mΩ (at V_GS = 10V, I_D = 28A)
• Threshold Voltage (V_GS(th)): 2-4V
• Input Capacitance (C_iss): 3300pF
• Output Capacitance (C_oss): 600pF
• Reverse Transfer Capacitance (C_rss): 150pF
• Turn-On Delay Time (t_d(on)): 13ns
• Rise Time (t_r): 60ns
• Turn-Off Delay Time (t_d(off)): 50ns
• Fall Time (t_f): 25ns
• Operating Junction Temperature (T_J): -55°C to +175°C
• Package: TO-220AB

Descriptions:

• The IRF3710PBF is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications.
• It is optimized for high efficiency and fast switching performance in power supplies, motor control, and DC-DC converters.
• The TO-220AB package provides good thermal dissipation characteristics.

Features:

• Low On-Resistance: Ensures minimal conduction losses.
• High Current Handling: Capable of handling up to 57A continuous current.
• Fast Switching Speed: Suitable for high-frequency applications.
• Avalanche Energy Rated: Provides robustness in inductive load conditions.
• Lead-Free & RoHS Compliant: Environmentally friendly manufacturing.

This MOSFET is commonly used in power management, automotive, and industrial applications.