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IRF4905PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF4905PBFINFINEON15762Yes

IRF4905PBF is a P-channel Power MOSFET manufactured by Infineon Technologies.

The IRF4905PBF is a P-channel Power MOSFET manufactured by Infineon Technologies.

Specifications:

  • Drain-Source Voltage (VDS): -55V
  • Continuous Drain Current (ID): -74A (at 25°C)
  • Pulsed Drain Current (IDM): -280A
  • Power Dissipation (PD): 200W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 20mΩ (at VGS = -10V, ID = -40A)
  • Threshold Voltage (VGS(th)): -2V to -4V
  • Total Gate Charge (Qg): 110nC (at VDS = -44V, VGS = -10V)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220AB

Descriptions & Features:

  • Advanced Process Technology: Optimized for low on-resistance and high switching performance.
  • Fast Switching Speed: Suitable for high-efficiency power applications.
  • Low Gate Charge: Reduces switching losses.
  • Avalanche Energy Specified: Enhances ruggedness in inductive load applications.
  • Fully Characterized Dynamic Performance: Ensures reliable operation in switching circuits.
  • Applications: Used in power supplies, motor control, DC-DC converters, and other high-current switching applications.

This MOSFET is designed for high-power applications requiring efficient switching and low conduction losses.

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