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IRF540NPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF540NPBFINFINEON9400Yes

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

The IRF540NPBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRF540NPBF
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 33A (at 25°C)
  • Pulsed Drain Current (IDM): 130A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 130W (at 25°C)
  • On-Resistance (RDS(on)): 44mΩ (at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 1800pF
  • Output Capacitance (Coss): 430pF
  • Reverse Transfer Capacitance (Crss): 140pF
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220AB

Description:

The IRF540NPBF is a high-performance N-channel power MOSFET designed for switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for power management in various electronic circuits.

Features:

  • High Current Capability: Supports up to 33A continuous drain current.
  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching: Optimized for high-efficiency power conversion.
  • Avalanche Energy Specified: Ensures robustness in inductive load applications.
  • TO-220 Package: Provides mechanical durability and efficient heat dissipation.

This information is based on Infineon's official datasheet for the IRF540NPBF.

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