Professional IC Distribution & Technical Solutions

The IRF8736TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IRF8736TRPBF
• Type: N-Channel Power MOSFET
• Technology: HEXFET®
• Drain-Source Voltage (V_DSS): 30V
• Continuous Drain Current (I_D): 140A (at 25°C)
• Pulsed Drain Current (I_DM): 560A
• R_DS(on) (Max): 1.3mΩ (at V_GS = 10V)
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 330W (at 25°C)
• Operating Temperature Range: -55°C to +175°C
• Package: TO-220AB
• Mounting Type: Through Hole

Descriptions:

The IRF8736TRPBF is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance (R_DS(on)) and high current handling capability, making it suitable for switching and amplification in high-power circuits.

Features:

• Low R_DS(on): Minimizes conduction losses for improved efficiency.
• High Current Capability: Supports up to 140A continuous drain current.
• Fast Switching: Optimized for high-frequency switching applications.
• Robust HEXFET® Technology: Ensures high reliability and performance.
• Avalanche Energy Rated: Enhances ruggedness in harsh conditions.
• Lead-Free & RoHS Compliant: Environmentally friendly.

This MOSFET is commonly used in power supplies, motor control, DC-DC converters, and other high-current switching applications.