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IRFB4229PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFB4229PBFINFINEON 3000Yes

IRFB4229PBF is a power MOSFET manufactured by Infineon Technologies.

The IRFB4229PBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features of the device:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRFB4229PBF
  • Type: N-Channel Power MOSFET
  • Package: TO-220AB
  • Drain-Source Voltage (VDS): 250V
  • Continuous Drain Current (ID): 82A (at 25°C)
  • Pulsed Drain Current (IDM): 330A
  • Power Dissipation (PD): 330W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 8.5mΩ (at VGS = 10V, ID = 41A)
  • Total Gate Charge (Qg): 120nC (typical)
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Operating Junction Temperature (TJ): -55°C to +175°C

Descriptions:

The IRFB4229PBF is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance, high current handling capability, and fast switching speeds, making it suitable for high-efficiency power conversion systems, motor drives, and industrial applications.

Features:

  • Low On-Resistance: Minimizes conduction losses for improved efficiency.
  • High Current Capability: Supports high-power applications.
  • Fast Switching: Optimized for high-frequency operation.
  • Avalanche Rated: Ensures ruggedness under inductive loads.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This information is strictly based on the manufacturer's datasheet and technical documentation.

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