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Home > INFINEON > IRLML6401TRPBF

IRLML6401TRPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRLML6401TRPBFINFINEON6808Yes

-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package

IRLML6401TRPBF Manufacturer: INFINEON

#### Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -3.7A
  • Pulsed Drain Current (IDM): -14A
  • Power Dissipation (PD): 1.3W
  • RDS(on) (Max): 85mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -1V (Max)
  • Package: SOT-23 (3-pin)
  • Operating Temperature Range: -55°C to +150°C

#### Descriptions:

The IRLML6401TRPBF is a P-Channel MOSFET from Infineon Technologies, designed for low-voltage applications. It features low on-resistance (RDS(on)) and fast switching performance, making it suitable for power management, load switching, and battery protection circuits.

#### Features:

  • Low gate charge for efficient switching
  • Logic-level gate drive compatibility
  • Low thermal resistance
  • Lead-free and RoHS compliant
  • Avalanche energy specified for ruggedness

This MOSFET is commonly used in portable electronics, DC-DC converters, and power distribution systems.

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