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S29GL01GS11DHIV13 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S29GL01GS11DHIV13INFINEON 260Yes

S29GL01GS11DHIV13** is a **1Gb (128MB) MirrorBit® NOR Flash Memory** manufactured by **Infineon Technologies**.

The S29GL01GS11DHIV13 is a 1Gb (128MB) MirrorBit® NOR Flash Memory manufactured by Infineon Technologies.

Key Specifications:

  • Density: 1Gb (128MB)
  • Organization: 64M x 16-bit
  • Interface: Parallel (x16)
  • Supply Voltage:
  • VCC (Core): 2.7V - 3.6V
  • VIO (I/O): 1.65V - 3.6V
  • Speed:
  • Access Time: 90ns (max)
  • Page Read Mode: 25ns (max)
  • Sector Architecture:
  • Uniform 128KB sectors
  • Top or Bottom Boot Block options
  • Endurance:
  • 100,000 program/erase cycles per sector (min)
  • Data Retention:
  • 20 years (min)
  • Operating Temperature Range:
  • Industrial (-40°C to +85°C)
  • Package:
  • 56-pin TSOP (Thin Small Outline Package)

Features:

  • MirrorBit® Technology: High-density NOR flash with reliable performance.
  • Low Power Consumption:
  • Active Read Current: 25mA (typical)
  • Standby Current: 25µA (typical)
  • Advanced Sector Protection:
  • Hardware and Software Locking
  • Password Protection
  • Fast Program & Erase Performance:
  • Word Programming: 7µs (typical)
  • Sector Erase: 0.5s (typical)
  • Compatibility:
  • JEDEC Standard Command Set
  • Backward compatible with earlier Spansion/Infineon NOR Flash devices

Applications:

  • Embedded systems
  • Automotive infotainment
  • Industrial control
  • Networking equipment
  • Telecommunications

This device is designed for high-performance, non-volatile storage in demanding applications requiring fast read/write operations and long-term reliability.

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