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D16N05 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D16N05INTERSIL466Yes

part D16N05 is a power MOSFET manufactured by HARRIS (now part of Renesas Electronics).

The part D16N05 is a power MOSFET manufactured by HARRIS (now part of Renesas Electronics). Here are its key specifications:

  • Type: N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDSS): 50V
  • Continuous Drain Current (ID): 16A
  • Pulsed Drain Current (IDM): 64A
  • Power Dissipation (PD): 75W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.08Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 800pF (typical)
  • Package: TO-220

These specifications are based on the original datasheet from HARRIS.

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