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The IRF830 is a power MOSFET manufactured by various semiconductor companies. Below are the factual specifications, descriptions, and features based on standard industry data:

Manufacturer:

• Multiple manufacturers produce the IRF830, including International Rectifier (now part of Infineon Technologies), Vishay, STMicroelectronics, and others.

SEC (Standard Electrical Characteristics) Specifications:

• Drain-Source Voltage (V_DSS): 500V
• Continuous Drain Current (I_D): 4.5A (at 25°C)
• Pulsed Drain Current (I_DM): 18A
• Power Dissipation (P_D): 75W (at 25°C)
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 1.5Ω (at V_GS = 10V, I_D = 2.2A)
• Threshold Voltage (V_GS(th)): 2-4V
• Input Capacitance (C_iss): 350pF (typical)
• Output Capacitance (C_oss): 50pF (typical)
• Reverse Transfer Capacitance (C_rss): 10pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 50ns (typical)

Descriptions & Features:

• Type: N-Channel Power MOSFET
• Package: TO-220 (through-hole)
• Technology: HEXFET® (for International Rectifier versions)
• Applications:
• Switching power supplies
• Motor control
• DC-DC converters
• Inverters
• High-voltage switching circuits
• Key Features:
• Fast switching speed
• Low gate charge
• High voltage capability
• Avalanche ruggedness
• Low thermal resistance

The specifications may vary slightly depending on the manufacturer. Always refer to the datasheet for exact values.