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IRF540NS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF540NSIR383Yes

IRF540NS is a power MOSFET manufactured by Infineon Technologies.

The IRF540NS is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Manufacturer:

Infineon Technologies

IRF540NS Specifications:

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 33A (at 25°C)
  • Pulsed Drain Current (IDM): 130A
  • Power Dissipation (PD): 130W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)):
  • 44mΩ (at VGS = 10V, ID = 27A)
  • 60mΩ (at VGS = 4.5V, ID = 17A)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 1800pF
  • Output Capacitance (Coss): 420pF
  • Reverse Transfer Capacitance (Crss): 120pF
  • Turn-On Delay Time (td(on)): 12ns
  • Turn-Off Delay Time (td(off)): 44ns
  • Rise Time (tr): 60ns
  • Fall Time (tf): 25ns
  • Operating Junction Temperature (TJ): -55°C to +175°C

Description:

The IRF540NS is an N-channel MOSFET designed for high-speed switching applications. It features low on-resistance, high current handling, and fast switching speeds, making it suitable for power management, motor control, and DC-DC converters.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast Switching for high-efficiency applications.
  • Avalanche Energy Rated for rugged performance.
  • TO-263 (D2PAK) Package for improved thermal performance.
  • Fully Characterized for Linear Mode Operation.
  • Lead-Free & RoHS Compliant.

This information is based on Infineon's official datasheet for the IRF540NS.

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