Professional IC Distribution & Technical Solutions

The IRF7705TRPBF is a power MOSFET manufactured by Infineon Technologies (IR). Below are its specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies (IR)
• Part Number: IRF7705TRPBF
• Type: N-Channel MOSFET
• Technology: HEXFET® Power MOSFET
• Drain-Source Voltage (VDS): 55V
• Continuous Drain Current (ID): 75A
• Pulsed Drain Current (IDM): 300A
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V
• RDS(ON) (Max) @ VGS = 10V: 5.5 mΩ
• RDS(ON) (Max) @ VGS = 4.5V: 7.5 mΩ
• Threshold Voltage (VGS(th)): 2V (Min), 4V (Max)
• Input Capacitance (Ciss): 4200 pF
• Output Capacitance (Coss): 1200 pF
• Reverse Transfer Capacitance (Crss): 300 pF
• Turn-On Delay Time (td(on)): 12 ns
• Rise Time (tr): 40 ns
• Turn-Off Delay Time (td(off)): 45 ns
• Fall Time (tf): 20 ns
• Package: TO-220AB (Through-Hole)
• Operating Temperature Range: -55°C to +175°C

Descriptions:

The IRF7705TRPBF is a high-performance N-Channel MOSFET designed for power management applications. It features low on-state resistance (RDS(ON)) and high current handling capability, making it suitable for switching and amplification in power electronics.

Features:

• Low gate charge for fast switching
• Low RDS(ON) for reduced conduction losses
• High current capability
• Avalanche energy specified
• Improved dv/dt capability
• Lead-free and RoHS compliant

This MOSFET is commonly used in DC-DC converters, motor control, power supplies, and other high-efficiency switching applications.

(Note: All specifications are based on manufacturer datasheets and may vary under different operating conditions.)