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IRFIB7N50A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFIB7N50AIR316Yes

IRFIB7N50A is a power MOSFET manufactured by International Rectifier (IR).

The IRFIB7N50A is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 7A
  • Pulsed Drain Current (IDM): 28A
  • Gate-Source Voltage (VGS): ±30V
  • Power Dissipation (PD): 150W
  • On-Resistance (RDS(on)): 0.85Ω (max) at VGS = 10V
  • Input Capacitance (Ciss): 1000pF (typical)
  • Output Capacitance (Coss): 150pF (typical)
  • Reverse Transfer Capacitance (Crss): 30pF (typical)
  • Turn-On Delay Time (td(on)): 20ns (typical)
  • Turn-Off Delay Time (td(off)): 60ns (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Descriptions:

  • The IRFIB7N50A is a high-voltage N-channel MOSFET designed for power switching applications.
  • It is optimized for high efficiency and fast switching performance.
  • The device is suitable for use in power supplies, motor control, and other high-voltage applications.

Features:

  • Fast Switching: Optimized for high-speed operation.
  • Low Gate Charge: Reduces switching losses.
  • Low On-Resistance: Enhances efficiency in power applications.
  • Avalanche Energy Specified: Ensures robustness in inductive load conditions.
  • Drain-Source Diode: Includes an intrinsic body diode for reverse current protection.

This information is based solely on the manufacturer's datasheet and specifications.

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