Professional IC Distribution & Technical Solutions

The IRFIB7N50A is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

• Drain-Source Voltage (V_DSS): 500V
• Continuous Drain Current (I_D): 7A
• Pulsed Drain Current (I_DM): 28A
• Gate-Source Voltage (V_GS): ±30V
• Power Dissipation (P_D): 150W
• On-Resistance (R_DS(on)): 0.85Ω (max) at V_GS = 10V
• Input Capacitance (C_iss): 1000pF (typical)
• Output Capacitance (C_oss): 150pF (typical)
• Reverse Transfer Capacitance (C_rss): 30pF (typical)
• Turn-On Delay Time (t_d(on)): 20ns (typical)
• Turn-Off Delay Time (t_d(off)): 60ns (typical)
• Operating Junction Temperature (T_J): -55°C to +150°C

Descriptions:

• The IRFIB7N50A is a high-voltage N-channel MOSFET designed for power switching applications.
• It is optimized for high efficiency and fast switching performance.
• The device is suitable for use in power supplies, motor control, and other high-voltage applications.

Features:

• Fast Switching: Optimized for high-speed operation.
• Low Gate Charge: Reduces switching losses.
• Low On-Resistance: Enhances efficiency in power applications.
• Avalanche Energy Specified: Ensures robustness in inductive load conditions.
• Drain-Source Diode: Includes an intrinsic body diode for reverse current protection.

This information is based solely on the manufacturer's datasheet and specifications.