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IRFU310 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFU310IR140Yes

IRFU310 is a power MOSFET manufactured by Samsung.

The IRFU310 is a power MOSFET manufactured by Samsung. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: Samsung
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.055Ω (max) at VGS = 10V
  • Gate Charge (Qg): 45nC (typical)
  • Input Capacitance (Ciss): 1500pF (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Description:

The IRFU310 is a high-performance N-channel MOSFET designed for power switching applications. It is optimized for low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • High current capability (30A continuous, 120A pulsed)
  • Low on-resistance (RDS(on)) for reduced conduction losses
  • Fast switching performance
  • Avalanche energy rated for ruggedness in inductive load applications
  • TO-220AB package for easy mounting and heat dissipation

This information is based solely on the manufacturer's datasheet and technical documentation.

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