Professional IC Distribution & Technical Solutions

The IRFZ24N is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details from the Manufactor Datasheet:

Specifications:

• Drain-Source Voltage (V_DSS): 55V
• Continuous Drain Current (I_D): 17A
• Pulsed Drain Current (I_DM): 68A
• Power Dissipation (P_D): 45W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.07Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 2-4V
• Input Capacitance (C_iss): 1300pF
• Output Capacitance (C_oss): 350pF
• Reverse Transfer Capacitance (C_rss): 100pF
• Turn-On Delay Time (t_d(on)): 13ns
• Turn-Off Delay Time (t_d(off)): 44ns
• Operating Temperature Range: -55°C to +175°C

Description:

The IRFZ24N is an N-channel power MOSFET designed for high-speed switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.

Features:

• Advanced HEXFET® Technology for low conduction losses.
• Low Gate Charge for improved switching efficiency.
• Avalanche Energy Specified for ruggedness in inductive loads.
• Fully Characterized for Dynamic Performance ensuring reliable operation in high-frequency circuits.
• Lead-Free & RoHS Compliant for environmental safety.

The IRFZ24N is housed in a TO-220 package for easy mounting and heat dissipation.

(End of factual information.)