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IS61WV25616BLL-10BLI Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IS61WV25616BLL-10BLIISSI 2630Yes

IS61WV25616BLL-10BLI** is a high-speed CMOS static RAM (SRAM) manufactured by **Integrated Silicon Solution Inc.

The IS61WV25616BLL-10BLI is a high-speed CMOS static RAM (SRAM) manufactured by Integrated Silicon Solution Inc. (ISSI). Below are its specifications, descriptions, and features:

Specifications:

  • Organization: 256K x 16-bit
  • Voltage Supply: 3.3V (±10%)
  • Access Time: 10ns
  • Operating Current: 85mA (typical)
  • Standby Current: 15mA (typical)
  • Package: 48-ball BGA (Ball Grid Array)
  • Operating Temperature Range: -40°C to +85°C (Industrial)
  • Pin Count: 48
  • I/O Type: Common I/O

Descriptions:

  • The IS61WV25616BLL-10BLI is a 3.3V 4Mb (256K x 16) Static RAM designed for high-performance applications.
  • It features fully static operation, meaning no refresh cycles are required.
  • The device supports asynchronous operation with a 10ns access time, making it suitable for high-speed memory applications.
  • It includes chip enable (CE), output enable (OE), and write enable (WE) controls for easy interfacing.
  • The BGA package provides a compact footprint for space-constrained designs.

Features:

  • High-speed access time: 10ns
  • Low power consumption:
  • Active current: 85mA (typical)
  • Standby current: 15mA (typical)
  • 3.3V single power supply
  • Fully static operation (no clock or refresh required)
  • Common I/O structure (separate input/output pins not required)
  • Industrial temperature range (-40°C to +85°C)
  • 48-ball BGA package
  • TTL-compatible inputs and outputs
  • Three-state outputs for bus compatibility

This SRAM is commonly used in networking, telecommunications, embedded systems, and industrial applications where fast, reliable memory access is required.

# IS61WV25616BLL-10BLI: Application Scenarios, Design Pitfalls, and Implementation Considerations

## Practical Application Scenarios

The IS61WV25616BLL-10BLI is a 256K x 16-bit high-speed CMOS static RAM (SRAM) manufactured by ISSI, designed for applications requiring fast, low-latency memory access. Key use cases include:

1. Embedded Systems and Microcontrollers

  • Ideal for cache memory or scratchpad RAM in microcontrollers (e.g., ARM Cortex-M, RISC-V) where deterministic access times (<10 ns) are critical.
  • Used in real-time systems (e.g., motor control, robotics) to store frequently accessed data without bus contention delays.

2. Networking and Communication Equipment

  • Employed in routers, switches, and FPGAs for packet buffering and lookup tables due to its high bandwidth (16-bit bus) and 10 ns access time.
  • Supports burst-mode operations in telecom hardware for rapid data retrieval.

3. Industrial Automation

  • Utilized in PLCs and industrial controllers for temporary data logging and high-speed sensor data processing.
  • Non-volatile backup (when paired with a battery) ensures data retention during power loss.

4. Automotive Systems

  • Suitable for ADAS (Advanced Driver Assistance Systems) where low-latency memory is required for sensor fusion algorithms.
  • Operates across industrial temperature ranges (-40°C to +85°C), making it resilient in harsh environments.

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Incorrect Voltage Level Matching

  • The IS61WV25616BLL-10BLI operates at 3.3V; interfacing with 5V or 1.8V logic requires level shifters.
  • Solution: Verify voltage compatibility early and incorporate bidirectional level translators if needed.

2. Signal Integrity Issues

  • High-speed operation (10 ns cycle time) can lead to signal degradation if trace lengths are mismatched or improperly terminated.
  • Solution: Implement controlled impedance routing, minimize trace lengths, and use series termination resistors for clean signal propagation.

3. Inadequate Power Supply Decoupling

  • Fast switching currents can cause voltage droops, leading to erratic behavior.
  • Solution: Place 0.1 µF decoupling capacitors near VCC pins and include bulk capacitance (10 µF) at the power entry point.

4. Improper Timing Constraints

  • Failing to account for setup/hold times (tSU, tH) relative to the host controller can cause read/write errors.
  • Solution: Model timing in SPICE or use manufacturer-provided IBIS models for accurate simulation.

## Key Technical Considerations for Implementation

1. Interface Compatibility

  • The SRAM uses an asynchronous parallel interface; ensure the host controller supports this protocol without wait-state insertion.

2. Memory Expansion

  • For larger memory requirements, multiple devices can be banked using chip-select (CE) signals, but bus loading must be managed.

3. Thermal Management

  • While the device is robust, prolonged high-frequency operation

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