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NJD6506S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NJD6506SJRC385Yes

NJD6506S is a semiconductor device manufactured by JRC (New Japan Radio Co.

The NJD6506S is a semiconductor device manufactured by JRC (New Japan Radio Co., Ltd.). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: JRC (New Japan Radio Co., Ltd.)
  • Type: Dual N-Channel MOSFET
  • Package: SOP-8
  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 6A (per channel)
  • Power Dissipation (PD): 2W (per channel)
  • On-Resistance (RDS(ON)): 50mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min), 2.5V (max)
  • Input Capacitance (Ciss): 600pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The NJD6506S is a dual N-channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor drivers, and other power management circuits.

Features:

  • Low on-resistance for reduced power loss
  • High-speed switching performance
  • Dual N-channel MOSFET in a compact SOP-8 package
  • Suitable for battery-powered and portable devices
  • ESD protection included

This information is based on the manufacturer's datasheet and technical documentation.

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