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NJL5103D Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NJL5103DJRC450Yes

NJL5103D is a semiconductor component manufactured by New Japan Radio Co.

The NJL5103D is a semiconductor component manufactured by New Japan Radio Co., Ltd. (JRC). Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: JRC (New Japan Radio Co., Ltd.)
  • Type: Dual NPN Transistor Array
  • Package: SSOP8 (Miniature Surface-Mount Package)
  • Maximum Collector-Base Voltage (Vcbo): 50V
  • Maximum Collector-Emitter Voltage (Vceo): 50V
  • Maximum Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 100mA (per transistor)
  • Total Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE): 100 to 400 (at Ic = 1mA, Vce = 6V)
  • Transition Frequency (fT): 250MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Description:

The NJL5103D is a dual NPN transistor array housed in an SSOP8 package. It is designed for high-frequency amplification and switching applications, offering matched transistor characteristics for improved circuit performance.

Features:

  • Dual NPN Transistors: Two independent NPN transistors in a single package.
  • High Transition Frequency (fT): Suitable for RF and high-speed switching.
  • Matched Characteristics: Ensures consistent performance in differential circuits.
  • Low Noise: Ideal for signal amplification applications.
  • Compact SSOP8 Package: Space-saving surface-mount design.

This information is based on the manufacturer’s datasheet and technical documentation.

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