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2SA1266-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1266-YKEC490Yes

2SA1266-Y** is a PNP bipolar junction transistor (BJT) manufactured by **KEC (Korea Electronics Company)**.

The 2SA1266-Y is a PNP bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Company). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = 0.5A, VCE = -5V)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

  • The 2SA1266-Y is a high-voltage, high-current PNP transistor designed for general-purpose amplification and switching applications.
  • It is commonly used in audio amplifiers, power management circuits, and driver stages.
  • The device is characterized by its high current gain and low saturation voltage, making it suitable for efficient switching.

Features:

  • High Voltage Capability (up to -50V)
  • High Current Gain (hFE) for improved amplification
  • Low Saturation Voltage for efficient switching
  • Compact TO-92 Package for easy PCB mounting
  • Wide Operating Temperature Range for robust performance

This transistor is a reliable choice for low-power applications requiring PNP functionality. For exact performance characteristics, refer to the official KEC datasheet.

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