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2SA1270 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1270KEC3380Yes

2SA1270** is a PNP silicon transistor manufactured by **KEC (Korea Electronics Company)**.

The 2SA1270 is a PNP silicon transistor manufactured by KEC (Korea Electronics Company). Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Material: Silicon
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 60-320 (depending on operating conditions)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The 2SA1270 is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications.
  • It is housed in a TO-92 package, making it suitable for compact circuit designs.
  • Suitable for use in audio amplifiers, power regulators, and driver circuits.

Features:

  • High voltage capability (up to -50V).
  • Good current gain linearity across a wide range of collector currents.
  • Low saturation voltage, improving efficiency in switching applications.
  • Reliable performance in various electronic circuits.

This transistor is commonly used in conjunction with complementary NPN transistors (such as the 2SC3116) in push-pull amplifier configurations.

For exact performance characteristics, always refer to the official KEC datasheet.

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