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2SC3200-GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3200-GRKEC318Yes

2SC3200-GR** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **KEC (Korea Electronics Company)**.

The 2SC3200-GR is a high-frequency NPN bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Company). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 4V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • Gain Bandwidth Product: High
  • Package Type: SOT-323 (SC-70)

Descriptions:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Suitable for low-noise amplifier (LNA) circuits, VHF/UHF applications, and wireless communication systems.
  • Compact SOT-323 package for space-constrained designs.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise figure (NF) for improved signal clarity.
  • Small form factor (SOT-323) for PCB space efficiency.
  • Reliable performance in high-frequency circuits.

This transistor is commonly used in RF amplifiers, oscillators, and communication modules. For exact performance characteristics, refer to the KEC datasheet.

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