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KIA6058F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KIA6058FKEC102Yes

KIA6058F Manufacturer: KEC (Korea Electronics Corporation)** ### **Specifications:** - **Type:** N-Channel Enhancement Mode MOSFET - **Drain-Source Voltage (VDSS):** 60V - **Gate-Source Voltage (VGSS):** ±20V - **Drain C

KIA6058F Manufacturer: KEC (Korea Electronics Corporation)

Specifications:

  • Type: N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): 50A (continuous)
  • Power Dissipation (PD): 150W
  • On-Resistance (RDS(ON)): 0.028Ω (max at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 1500pF (typical)
  • Package: TO-220F (Fully Molded)

Descriptions & Features:

  • Designed for high-power switching applications.
  • Low on-resistance for improved efficiency.
  • Fast switching speed.
  • Fully molded TO-220F package for better thermal performance.
  • Suitable for power management in automotive, industrial, and consumer electronics.

(Source: KEC Datasheet & product documentation)

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