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KIA7657P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KIA7657PKEC150Yes

KIA7657P Manufacturer: KEC (Korea Electronics Company)** ### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-frequency amplification, RF applications - **Collector-Base Voltage (VCBO):** 30V - *

KIA7657P Manufacturer: KEC (Korea Electronics Company)

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-frequency amplification, RF applications
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 25V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 300mW
  • Transition Frequency (fT): 800MHz
  • Gain Bandwidth Product: High-frequency performance
  • Package: TO-92 (Standard through-hole package)

Descriptions:

The KIA7657P is a high-frequency NPN transistor designed for RF amplification and signal processing applications. It is commonly used in communication circuits, oscillators, and low-noise amplifiers due to its stable performance at high frequencies.

Features:

  • High Transition Frequency (800MHz) for RF applications
  • Low Noise characteristics suitable for sensitive circuits
  • Compact TO-92 Package for easy PCB mounting
  • Reliable Performance in amplification and switching circuits

This transistor is widely used in consumer electronics, radio equipment, and other high-frequency applications.

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