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KID65004AF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KID65004AFKEC5619Yes

Manufacturer:** KEC (Korea Electronics Company) **Part Number:** KID65004AF ### **Specifications:** - **Type:** Power MOSFET - **Channel Type:** N-Channel - **Drain-Source Voltage (VDSS):** 60V - **Continuous Drain Current (I

Manufacturer: KEC (Korea Electronics Company)

Part Number: KID65004AF

Specifications:

  • Type: Power MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 65A
  • Pulsed Drain Current (IDM): 260A
  • Power Dissipation (PD): 150W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 4200pF (typ)
  • Package: TO-252 (DPAK)

Descriptions:

The KID65004AF is an N-Channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Improved thermal performance
  • RoHS compliant
  • AEC-Q101 qualified (if applicable)

(Note: Always verify datasheet details for exact specifications.)

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