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KID65603P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KID65603PKEC100Yes

Manufacturer:** KEC (Korea Electronics Company) **Part Number:** KID65603P ### **Specifications:** - **Type:** Power MOSFET - **Channel Type:** N-Channel - **Drain-Source Voltage (VDSS):** 60V - **Continuous Drain Current (I

Manufacturer: KEC (Korea Electronics Company)

Part Number: KID65603P

Specifications:

  • Type: Power MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 65A
  • Pulsed Drain Current (IDM): 260A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 6.5mΩ (typical) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (typical)
  • Package: TO-252 (DPAK)

Descriptions:

The KID65603P is an N-Channel power MOSFET designed for high-efficiency power switching applications. It features low on-resistance and high current capability, making it suitable for power management in DC-DC converters, motor control, and other high-current circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current handling capability
  • Fast switching performance
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications.

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