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KRC855U-RTK/P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KRC855U-RTK/PKEC18000Yes

### **KRC855U-RTK/P Manufacturer: KEC** #### **Specifications:** - **Type:** N-Channel Power MOSFET - **Drain-Source Voltage (VDSS):** 55V - **Continuous Drain Current (ID):** 85A - **Pulsed Drain Current (IDM):

KRC855U-RTK/P Manufacturer: KEC

#### Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 55V
  • Continuous Drain Current (ID): 85A
  • Pulsed Drain Current (IDM): 340A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 6.5mΩ (max) @ VGS = 10V
  • Total Gate Charge (Qg): 100nC (typ)
  • Input Capacitance (Ciss): 5000pF (typ)
  • Package: TO-220

#### Descriptions:

The KRC855U-RTK/P is an N-Channel MOSFET designed for high-power switching applications. It features low on-resistance, high current handling, and fast switching performance, making it suitable for power supplies, motor control, and DC-DC converters.

#### Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability (85A continuous)
  • Fast switching speed
  • Enhanced thermal performance
  • Robust TO-220 package for efficient heat dissipation
  • Suitable for high-efficiency power management applications

For detailed electrical characteristics, refer to the official datasheet from KEC.

# Application Scenarios and Design Phase Pitfall Avoidance for the KRC855U-RTK/P

The KRC855U-RTK/P is a high-performance electronic component designed for precision applications where reliability and efficiency are critical. Its advanced features make it suitable for a wide range of industries, including telecommunications, industrial automation, and embedded systems. However, integrating this component into a design requires careful consideration to avoid common pitfalls that could compromise performance.

## Key Application Scenarios

1. Telecommunications Infrastructure

The KRC855U-RTK/P is well-suited for use in base stations, signal repeaters, and RF communication modules. Its low noise characteristics and stable operation under varying environmental conditions ensure consistent signal integrity, making it ideal for high-frequency applications.

2. Industrial Automation

In automation systems, the component’s robustness against electromagnetic interference (EMI) and temperature fluctuations enhances the reliability of control units, motor drives, and sensor interfaces. Its fast response time also supports real-time processing in automated manufacturing environments.

3. Embedded Systems and IoT Devices

For IoT applications, the KRC855U-RTK/P provides efficient power management and compact integration, making it a strong candidate for smart sensors, wearable devices, and edge computing modules. Its low power consumption extends battery life in portable applications.

4. Medical Electronics

Precision and stability are crucial in medical devices such as patient monitors and diagnostic equipment. The component’s high accuracy and minimal drift over time ensure dependable performance in critical healthcare applications.

## Design Phase Pitfall Avoidance

1. Power Supply Stability

The KRC855U-RTK/P requires a stable power source to function optimally. Designers should implement proper decoupling capacitors and voltage regulation to mitigate noise and voltage spikes that could degrade performance.

2. Thermal Management

While the component is designed for durability, excessive heat can still affect longevity. Proper heat dissipation through PCB layout optimization, thermal vias, or heatsinks should be considered, especially in high-power applications.

3. Signal Integrity Considerations

High-frequency applications demand careful routing of signal traces to minimize crosstalk and impedance mismatches. Using controlled impedance traces and avoiding long, parallel signal paths can help maintain signal fidelity.

4. EMI Mitigation

Shielding and grounding techniques should be employed to reduce interference from external sources. Proper PCB layer stack-up and the use of ferrite beads or filters can enhance EMI resistance.

5. Component Placement and Routing

Avoid placing the KRC855U-RTK/P near high-noise components like switching regulators or clock generators. Strategic placement and minimizing trace lengths can prevent unintended coupling and signal degradation.

By understanding these application scenarios and proactively addressing potential design challenges, engineers can maximize the performance and reliability of the KRC855U-RTK/P in their systems. Careful planning and adherence to best practices will ensure seamless integration and long-term operational success.

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