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LTC561P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LTC561PLITEON1900Yes

LTC561P** is a phototransistor manufactured by **LITEON**.

The LTC561P is a phototransistor manufactured by LITEON. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Phototransistor
  • Package: Through-hole (likely in a standard 3mm or 5mm package)
  • Wavelength Sensitivity: Typically optimized for infrared (IR) detection (~850nm–950nm)
  • Collector-Emitter Voltage (VCEO): ~30V (exact value may vary)
  • Collector Current (IC): ~20mA (dependent on light intensity)
  • Dark Current (ID): Low (typically in the nanoampere range)
  • Operating Temperature Range: -25°C to +85°C (approximate)

Descriptions:

  • The LTC561P is an NPN silicon phototransistor designed for light-sensing applications.
  • It responds to IR or visible light (depending on variant) and converts light intensity into an electrical signal.
  • Commonly used in optoisolators, encoders, object detection, and light barriers.

Features:

  • High sensitivity to IR light.
  • Fast response time (microsecond range).
  • Low dark current for improved signal-to-noise ratio.
  • Compact and durable through-hole package.

For exact electrical characteristics, refer to the LITEON datasheet for the LTC561P.

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