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3SQ01383T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3SQ01383TMICROCHIP134Yes

3SQ01383T** is a **MOSFET** device manufactured by **Microchip Technology**.

The 3SQ01383T is a MOSFET device manufactured by Microchip Technology. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: Microchip
  • Type: N-Channel MOSFET
  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 5.8A (continuous)
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(ON)): 0.028Ω (max) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 1V (min) – 2.5V (max)
  • Gate-Source Voltage (VGS): ±20V (max)
  • Package: SOT-23

Descriptions:

The 3SQ01383T is a low-voltage N-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance, making it suitable for battery-powered devices, DC-DC converters, and load switching circuits.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Fast switching speed
  • Low gate charge for improved efficiency
  • AEC-Q101 qualified (automotive-grade reliability)
  • Pb-free and RoHS compliant

This MOSFET is commonly used in portable electronics, power management, and motor control applications.

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