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3SQ01712T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3SQ01712TMICROCHIP388Yes

MICROCHIP 3SQ01712T** is a **17A, 1200V** silicon carbide (SiC) Schottky diode.

The MICROCHIP 3SQ01712T is a 17A, 1200V silicon carbide (SiC) Schottky diode.

Key Specifications:

  • Voltage Rating (VRRM): 1200V
  • Average Forward Current (IF(AV)): 17A
  • Peak Forward Surge Current (IFSM): 100A (non-repetitive)
  • Forward Voltage Drop (VF): Typically 1.7V at 17A
  • Reverse Leakage Current (IR): Typically 10µA at 1200V
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220-2L (Through-hole)

Features:

  • Zero Reverse Recovery Current (Qrr): Enhances efficiency in high-frequency applications
  • High Temperature Operation: Reliable performance up to 175°C
  • Low Forward Voltage Drop: Reduces conduction losses
  • Fast Switching: Ideal for high-frequency power conversion
  • Avalanche Energy Rated: Robust against transient voltage spikes

Applications:

  • Power factor correction (PFC)
  • Solar inverters
  • Electric vehicle (EV) charging systems
  • Industrial power supplies
  • High-voltage DC-DC converters

This diode is designed for high-efficiency, high-power applications where fast switching and thermal stability are critical.

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