Professional IC Distribution & Technical Solutions

Part 2SA696 Manufacturer MIT Specifications, Descriptions, and Features

Manufacturer: MIT (Mitsubishi Electric)

Part Number: 2SA696

Transistor Type: PNP Silicon Epitaxial Planar Transistor

Key Specifications:

• Collector-Base Voltage (VCBO): -50V
• Collector-Emitter Voltage (VCEO): -50V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -1.5A
• Collector Dissipation (PC): 1W
• Junction Temperature (Tj): 125°C
• Storage Temperature (Tstg): -55°C to +150°C
• DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
• Transition Frequency (fT): 80MHz (typical)

Descriptions:

• The 2SA696 is a high-voltage, high-speed PNP transistor designed for general-purpose amplification and switching applications.
• It features low saturation voltage and high current gain, making it suitable for audio amplifiers, driver circuits, and power regulation.
• Encased in a TO-92 package for easy mounting and heat dissipation.

Features:

• High Voltage Tolerance: Suitable for circuits requiring up to -50V.
• Fast Switching Speed: Ideal for high-frequency applications.
• Low Noise Performance: Ensures clean signal amplification.
• Wide hFE Range: Provides flexibility in circuit design.

Applications:

• Audio amplifiers
• Signal processing circuits
• Switching regulators
• Driver stages

This information is based on manufacturer datasheets and technical documentation. Always verify specifications with the latest datasheet before use.