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2SA696 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA696MIT400Yes

Part 2SA696 Manufacturer MIT Specifications, Descriptions, and Features** ### **Manufacturer:** MIT (Mitsubishi Electric) ### **Part Number:** 2SA696 ### **Transistor Type:** PNP Silicon Epitaxial Planar Transistor ### **Key Specifications:**

Part 2SA696 Manufacturer MIT Specifications, Descriptions, and Features

Manufacturer: MIT (Mitsubishi Electric)

Part Number: 2SA696

Transistor Type: PNP Silicon Epitaxial Planar Transistor

Key Specifications:

  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W
  • Junction Temperature (Tj): 125°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Transition Frequency (fT): 80MHz (typical)

Descriptions:

  • The 2SA696 is a high-voltage, high-speed PNP transistor designed for general-purpose amplification and switching applications.
  • It features low saturation voltage and high current gain, making it suitable for audio amplifiers, driver circuits, and power regulation.
  • Encased in a TO-92 package for easy mounting and heat dissipation.

Features:

  • High Voltage Tolerance: Suitable for circuits requiring up to -50V.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Low Noise Performance: Ensures clean signal amplification.
  • Wide hFE Range: Provides flexibility in circuit design.

Applications:

  • Audio amplifiers
  • Signal processing circuits
  • Switching regulators
  • Driver stages

This information is based on manufacturer datasheets and technical documentation. Always verify specifications with the latest datasheet before use.

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