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2SC3243 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3243MIT1401Yes

2SC3243** is a high-frequency, high-power NPN bipolar junction transistor (BJT) manufactured by **Mitsubishi Electric (MIT)**.

The 2SC3243 is a high-frequency, high-power NPN bipolar junction transistor (BJT) manufactured by Mitsubishi Electric (MIT).

Manufacturer Specifications:

  • Manufacturer: Mitsubishi Electric (MIT)
  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-220F (isolated type)
  • Maximum Ratings:
  • Collector-Base Voltage (VCBO): 230V
  • Collector-Emitter Voltage (VCEO): 230V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 15A
  • Total Power Dissipation (PT): 50W
  • Electrical Characteristics:
  • DC Current Gain (hFE): 40 (min) at IC = 5A, VCE = 5V
  • Transition Frequency (fT): 30MHz (typical)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V (max) at IC = 5A, IB = 1A

Descriptions:

The 2SC3243 is designed for high-power amplification and switching applications, particularly in audio amplifiers, power supplies, and motor control circuits. It features a high collector current capability (15A) and a high voltage rating (230V), making it suitable for robust power applications.

Features:

  • High current and voltage capability
  • Low collector-emitter saturation voltage
  • High-speed switching performance
  • Isolated TO-220F package for improved thermal dissipation
  • Suitable for power amplification and switching circuits

This transistor is commonly used in industrial and consumer electronics where high power handling is required.

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