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2SC3928A-T112-1R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3928A-T112-1RMIT2890Yes

2SC3928A-T112-1R** is a high-frequency, high-power NPN silicon transistor manufactured by **MIT (Mitsubishi Electric)**.

The 2SC3928A-T112-1R is a high-frequency, high-power NPN silicon transistor manufactured by MIT (Mitsubishi Electric). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 4V
  • Collector Current (IC): 1.5A (max)
  • Total Power Dissipation (PT): 1.5W
  • Transition Frequency (fT): 200MHz (typical)
  • DC Current Gain (hFE): 120 - 240 (at IC = 0.5A, VCE = 5V)
  • Package Type: SOT-89 (SC-62)

Descriptions:

  • Designed for RF amplification and high-frequency switching applications.
  • Suitable for VHF/UHF band amplification in wireless communication systems.
  • Low saturation voltage ensures efficient power handling.

Features:

  • High fT (200MHz) for fast switching and amplification.
  • High current gain (hFE) for improved signal amplification.
  • Compact SOT-89 package for space-saving PCB designs.
  • Low noise performance for RF applications.

This transistor is commonly used in RF amplifiers, mobile communication devices, and high-frequency circuits.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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