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M51518L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M51518LMIT170Yes

Manufacturer:** MIT (Microelectronics Technology Inc.

Manufacturer: MIT (Microelectronics Technology Inc.)

Part Number: M51518L

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Package: TO-220
  • Polarity: NPN
  • Maximum Power Dissipation (Ptot): 125W
  • Collector-Emitter Voltage (VCEO): 160V
  • Collector Current (IC): 15A
  • Transition Frequency (fT): 30MHz
  • Gain Bandwidth Product: N/A (Not specified in datasheet)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The M51518L is a high-power NPN bipolar junction transistor (BJT) designed for RF and linear amplification applications. It is commonly used in RF power amplifiers, transmitters, and industrial equipment requiring high power handling capabilities.

Features:

  • High power dissipation capability (125W)
  • High collector current (15A)
  • Medium-frequency operation (up to 30MHz)
  • Robust TO-220 package for efficient heat dissipation
  • Suitable for RF and linear amplification circuits

For detailed electrical characteristics and application notes, refer to the official MIT datasheet.

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