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M57959L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M57959LMIT144Yes

part **M57959L** is manufactured by **Mitsubishi Electric (MIT)**.

The part M57959L is manufactured by Mitsubishi Electric (MIT).

Specifications:

  • Type: High-speed, high-voltage photocoupler (IGBT/MOSFET gate drive)
  • Input Current (IF): 16 mA (typical)
  • Output Current (IO): ±2.5 A (peak)
  • Supply Voltage (VCC): +15 V to +30 V
  • Isolation Voltage (Viso): 2500 Vrms (min)
  • Propagation Delay (tPLH/tPHL): 0.5 µs (max)
  • Operating Temperature Range: -40°C to +100°C
  • Package: 8-pin DIP

Descriptions & Features:

  • Designed for driving IGBTs and power MOSFETs in high-speed switching applications.
  • Includes built-in overcurrent protection (OCP) and desaturation detection.
  • High noise immunity due to opto-isolation.
  • CMOS/TTL compatible input for easy interfacing with control circuits.
  • Under-voltage lockout (UVLO) protection for safe operation.
  • High output current capability for fast switching of power devices.

This part is commonly used in motor drives, inverters, and power supplies.

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