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MPS9635C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MPS9635CMOTO115Yes

Manufacturer:** MOTO **Part Number:** MPS9635C ### **Specifications:** - **Type:** PNP Silicon Transistor - **Collector-Emitter Voltage (Vceo):** -30V - **Collector-Base Voltage (Vcbo):** -40V - **Emitter-Base Voltage (Vebo):** -5V - **C

Manufacturer: MOTO

Part Number: MPS9635C

Specifications:

  • Type: PNP Silicon Transistor
  • Collector-Emitter Voltage (Vceo): -30V
  • Collector-Base Voltage (Vcbo): -40V
  • Emitter-Base Voltage (Vebo): -5V
  • Collector Current (Ic): -3A
  • Power Dissipation (Pd): 30W
  • DC Current Gain (hFE): 40-320
  • Operating Temperature Range: -65°C to +150°C
  • Package: TO-220

Descriptions:

The MPS9635C is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a high current capability and moderate gain, making it suitable for power control circuits.

Features:

  • High collector current capability (-3A)
  • Medium power dissipation (30W)
  • Wide range of DC current gain (hFE)
  • TO-220 package for efficient heat dissipation
  • Suitable for switching and linear amplification

This information is based on standard datasheet specifications. For exact performance characteristics, refer to the manufacturer's official documentation.

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