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MT4C1664Z-10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MT4C1664Z-10MT110Yes

MT4C1664Z-10** is a high-speed CMOS dynamic random-access memory (DRAM) chip manufactured by **Micron Technology (MT)**.

The MT4C1664Z-10 is a high-speed CMOS dynamic random-access memory (DRAM) chip manufactured by Micron Technology (MT). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: 4M x 16-bit (64Mb) DRAM
  • Organization: 4,194,304 words × 16 bits
  • Speed: 10ns (100MHz) access time
  • Voltage Supply: 3.3V ± 0.3V
  • Package: 40-pin ZIP (Zig-Zag Inline Package)
  • Refresh: 4,096 cycles every 64ms (CAS-before-RAS refresh)
  • Operating Temperature: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)

Descriptions:

  • The MT4C1664Z-10 is a synchronous DRAM (SDRAM) designed for high-performance computing and embedded applications.
  • It features a fast access time of 10ns, making it suitable for systems requiring rapid data access.
  • The chip operates at 3.3V, ensuring low power consumption.
  • It supports CAS-before-RAS (CBR) refresh and hidden refresh modes.

Features:

  • High-Speed Performance: 100MHz operation with 10ns access time.
  • Low Power Consumption: 3.3V operation reduces power usage.
  • Synchronous Operation: Supports burst mode for efficient data transfer.
  • Standard Interface: Compatible with industry-standard DRAM controllers.
  • Reliable Refresh Mechanism: 4,096 refresh cycles every 64ms.

This information is strictly based on manufacturer specifications without additional recommendations.

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