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D3341C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D3341CNEC105Yes

Manufacturer:** NEC **Part Number:** D3341C ### **Specifications:** - **Type:** High-frequency transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCB):** 30V - **Maximum Collector-Em

Manufacturer: NEC

Part Number: D3341C

Specifications:

  • Type: High-frequency transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 30V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 800mA
  • Total Power Dissipation (Ptot): 500mW
  • Junction Temperature (Tj): 125°C
  • Transition Frequency (fT): 200MHz
  • Package Type: TO-92

Descriptions:

The NEC D3341C is a general-purpose NPN bipolar junction transistor (BJT) designed for high-frequency amplification and switching applications. It is commonly used in RF circuits, oscillators, and signal amplification stages.

Features:

  • High transition frequency (200MHz)
  • Low noise performance
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting
  • Reliable silicon construction

This transistor is typically used in consumer electronics, communication devices, and low-power RF applications.

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