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2SB811 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB811NEC185Yes

2SB811** is a PNP bipolar junction transistor (BJT) manufactured by NEC.

The 2SB811 is a PNP bipolar junction transistor (BJT) manufactured by NEC. Below are its key specifications, descriptions, and features based on NEC's datasheet:

Manufacturer: NEC (Nippon Electric Company)

Type: PNP Silicon Epitaxial Planar Transistor

Application: High-power amplification and switching

Key Specifications:

  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -60V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A (continuous)
  • Collector Dissipation (PC): 25W (at 25°C)
  • DC Current Gain (hFE): 60 to 320 (at IC = 500mA, VCE = -5V)
  • Transition Frequency (fT): 10MHz (typical)
  • Operating Junction Temperature (Tj): -55°C to +150°C

Features:

  • High current capability
  • Low saturation voltage
  • Suitable for power amplification and switching applications
  • TO-220 package for efficient heat dissipation

Package Type: TO-220 (plastic-molded)

This transistor is commonly used in audio amplifiers, power regulators, and other high-power circuits. Ensure proper heat sinking when operating near maximum ratings.

*Note: Always refer to the official NEC datasheet for precise technical details before implementation.*

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