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C1330HA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
C1330HANEC306Yes

NEC C1330HA** is a high-performance, high-reliability **NPN silicon transistor** designed for general-purpose amplification and switching applications.

The NEC C1330HA is a high-performance, high-reliability NPN silicon transistor designed for general-purpose amplification and switching applications.

Manufacturer: NEC (Nippon Electric Company)

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 500mW
  • DC Current Gain (hFE): 100 to 300 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 200MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-92 (Plastic Encapsulation)

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Suitable for low-power amplification and switching circuits

Applications:

  • Audio amplification
  • Signal processing
  • Switching circuits
  • Driver stages

This transistor is commonly used in consumer electronics, industrial control systems, and communication devices.

(Note: Always refer to the official NEC datasheet for precise technical details.)

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