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C3295 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
C3295NEC310Yes

Part C3295 Manufacturer: NEC** ### **Specifications:** - **Type:** NPN Bipolar Junction Transistor (BJT) - **Material:** Silicon (Si) - **Maximum Collector-Emitter Voltage (Vceo):** 30V - **Maximum Collector-Base Voltage (Vcbo):** 60V - **M

Part C3295 Manufacturer: NEC

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Material: Silicon (Si)
  • Maximum Collector-Emitter Voltage (Vceo): 30V
  • Maximum Collector-Base Voltage (Vcbo): 60V
  • Maximum Emitter-Base Voltage (Vebo): 5V
  • Maximum Collector Current (Ic): 50mA
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (ft): 200MHz
  • DC Current Gain (hFE): 40–200 (depending on operating conditions)
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The C3295 is a general-purpose NPN transistor designed for low-power amplification and switching applications. It is commonly used in audio amplifiers, signal processing circuits, and small switching systems.

Features:

  • High transition frequency (200MHz) for RF and high-speed applications
  • Low noise performance
  • Compact TO-92 package for easy PCB mounting
  • Suitable for small-signal amplification

This transistor is now obsolete, and NEC no longer produces it. Alternative replacements may be available from other manufacturers.

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