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UPA64H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPA64HNEC186Yes

UPA64H is a high-frequency, high-gain NPN silicon transistor manufactured by NEC.

The UPA64H is a high-frequency, high-gain NPN silicon transistor manufactured by NEC. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Transistor
  • Manufacturer: NEC
  • Package: TO-92 (plastic-encapsulated)
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 200mW
  • Transition Frequency (fT): 800MHz (min)
  • Noise Figure (NF): 3dB (typical at 1GHz)
  • DC Current Gain (hFE): 40–200 (at IC = 1mA, VCE = 6V)

Descriptions:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Suitable for low-noise, small-signal amplification in communication circuits.
  • Compact TO-92 package for easy PCB mounting.

Features:

  • High Transition Frequency (fT): 800MHz (min) for excellent high-frequency performance.
  • Low Noise Figure (NF): 3dB typical at 1GHz, making it ideal for RF applications.
  • Wide hFE Range: 40–200 for flexible circuit design.
  • Low Power Consumption: Suitable for battery-operated devices.

This transistor is commonly used in RF amplifiers, oscillators, and other high-frequency circuits.

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