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UPB123D-A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPB123D-ANEC244Yes

UPB123D-A** is a semiconductor device manufactured by **NEC**.

The UPB123D-A is a semiconductor device manufactured by NEC. Below are the key specifications, descriptions, and features:

Manufacturer: NEC (NEC Electronics Corporation)

Specifications:

  • Type: Bipolar Transistor
  • Package: TO-92 (Plastic Encapsulated)
  • Polarity: PNP
  • Maximum Collector-Base Voltage (VCB): -50V
  • Maximum Collector-Emitter Voltage (VCE): -50V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Collector Current (IC): -500mA
  • Total Power Dissipation (Ptot): 625mW
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60 to 400 (at IC = -100mA, VCE = -1V)
  • Transition Frequency (fT): 150MHz

Description:

The UPB123D-A is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a compact TO-92 package, making it suitable for space-constrained designs.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Low saturation voltage, enhancing switching efficiency.
  • High transition frequency (fT) for improved high-frequency performance.
  • Reliable TO-92 package, ensuring durability and ease of mounting.

This transistor is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications.

For detailed electrical characteristics and application notes, refer to NEC's official datasheet.

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