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The UPB123D-A is a semiconductor device manufactured by NEC. Below are the key specifications, descriptions, and features:

Manufacturer: NEC (NEC Electronics Corporation)

Specifications:

• Type: Bipolar Transistor
• Package: TO-92 (Plastic Encapsulated)
• Polarity: PNP
• Maximum Collector-Base Voltage (V_CB): -50V
• Maximum Collector-Emitter Voltage (V_CE): -50V
• Maximum Emitter-Base Voltage (V_EB): -5V
• Collector Current (I_C): -500mA
• Total Power Dissipation (P_tot): 625mW
• Junction Temperature (T_j): 150°C
• DC Current Gain (h_FE): 60 to 400 (at I_C = -100mA, V_CE = -1V)
• Transition Frequency (f_T): 150MHz

Description:

The UPB123D-A is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a compact TO-92 package, making it suitable for space-constrained designs.

Features:

• High current gain (h_FE) for efficient signal amplification.
• Low saturation voltage, enhancing switching efficiency.
• High transition frequency (f_T) for improved high-frequency performance.
• Reliable TO-92 package, ensuring durability and ease of mounting.

This transistor is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications.

For detailed electrical characteristics and application notes, refer to NEC's official datasheet.