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UPC1241H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC1241HNEC500Yes

Manufacturer:** NEC **Part Number:** UPC1241H ### **Specifications:** - **Type:** RF Power Transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Power Dissipation (Pc):** 20W - **Collector-Base Voltage (VCBO):** 60V -

Manufacturer: NEC

Part Number: UPC1241H

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Power Dissipation (Pc): 20W
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1.5A
  • Transition Frequency (fT): 200MHz
  • Gain (hFE): 60-200
  • Package: TO-220

Descriptions:

The UPC1241H is an NPN silicon RF power transistor designed for high-frequency amplification applications. It is suitable for RF power amplifiers in VHF/UHF bands and other RF circuits requiring medium power handling.

Features:

  • High power gain
  • Low distortion
  • Suitable for RF amplification in the VHF/UHF range
  • TO-220 package for efficient heat dissipation
  • Robust construction for reliable performance

This transistor is commonly used in RF amplifiers, transmitters, and other high-frequency applications.

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